Dear BSIMSOI Users: We are releasing our BSIMSOI3.2 model today. In this version, several new features are included: 1. The model selector, SoiMod, now is both an instance and model parameter. SoiMod will determine the operation of BSIMSOI. SoiMod=0 is for PD device, SoiMod=2 is for ideal FD device; SoiMod=1 is for FD device with floating body; as SoiMod=3, the model will select the operation mode for users. 2. Model parameter TOXM is introduced to take into account TOX dependence in model parameters K1 and K2 hence to improve the scalability of Vth model over Tox. 3. Model parameter NOFF is introduced to improve moderate inversion transcapacitance model accuracy. These two parameter enhancements are compatible to BSIM3/4. 4. Improved flicker noise model and thermal noise model compatible with BSIM4 have been implemented. Gate tunneling induced shot noise and thermal noise due to gate electrode resistance are also included. The BSIMSOI3.2 source code, user's manual, and bug report can be downloaded at http://www-device.eecs.berkeley.edu/~bsimsoi Thank you for your support of the BSIMSOI model. We'll continue to research new refinements to the existing model to support the progress of the SOI CMOS technology. Sincerely, BSIM Team UC Berkeley