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   HiSIM1.2.0 Release Note                   April/9/2003
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Release informations of the HiSIM1.2.0 (April 9, 2003)

HiSIM1.2.0 is the minor revised version of HiSIM1.1.1.
And we also release the HiSIM1.0.2 and HiSIM1.1.2,
which are sub-minor revised and bug fixed versions
for HiSIM1.0.1 and HiSIM1.1.1, respectively.

The main model file name of HiSIM source code is changed to:

   HiSIM1.2.0 (The latest version of HiSIM1.2-series)
      NEW: hsm1eval120.c
   HiSIM1.1.2 (The latest version of HiSIM1.1-series)
      OLD: hsm1eval1_1_1.c
      REVISED: hsm1eval112.c
   HiSIM1.0.2 (The latest version of HiSIM1.0-series)
      OLD: hsm1eval1_0_1.c
      REVISED: hsm1eval102.c

HiSIM1.2.0 has the following new features:

   * GISL (Gate Induced Source Leakage) current model is
     implemented.
   * Gate leakage current model is improved.
   * New model parameter "PTHROU" is introduced to reproduce
     the subthreshold characteristics for short-channel devices.
   * 1/f noise model is improved.
   * The effective bias Veff is introduced for smoothing
     conductances at high voltage ranges for Vds, Vgs and Vbs.

If you have any questions or comments on HiSIM1.2.0,
please send email to masuda.h@starc.or.jp

Sincerely,
STARC Physical Design Gr.