Since the UFSOI (UFPDB and FD) models are truly physical, they cannot be described by single equations. The basic formalisms are described in the Ph.D. dissertations cited in the User's Guide, and are overviewed pretty well by the following papers. A concise overview of the UFPDB model is given in the paper UFPDB.pdf in this directory. D. Suh and J. G. Fossum, "A Physical Charge-Based Model for Non-Fully Depleted SOI MOSFET's and Its Use in Assessing Floating-Body Effects in SOI CMOS Circuits," IEEE Trans. Electron Devices, vol. 42, pp. 728-737, Apr. 1995. P. C. Yeh and J. G. Fossum, "Physical Subthreshold MOSFET Modeling Applied to Viable Design of Deep-Submicrometer Fully Depleted SOI Low-Voltage CMOS Technology," IEEE Trans. Electron Devices, vol. 42, pp. 1605-1613, Sept. 1995. S. Krishnan and J. G. Fossum, "Compact Non-Local Modeling of Impact Ionization in SOI MOSFETs for Optimal CMOS Device/Circuit Design," Solid-State Electron., vol. 39, pp. 661-668, May 1996. G. O. Workman, J. G. Fossum, S. Krishnan, and M. M. Pelella, Jr., "Physical Modeling of Temperature Dependences of SOI CMOS Devices and Circuits Including Self-Heating," IEEE Trans. Electron Devices, vol. 45, pp. 125-133, Jan. 1998 G. O. Workman and J. G. Fossum, "Physical Noise Modeling of SOI MOSFETs with Analysis of the Lorentzian Component in the Low- Frequency Noise Spectrum, IEEE Trans. Electron Devices, vol. 47, pp. 1192-1201, June 2000 L. Ge, J. G. Fossum, and B. Liu, "Physical Compact Modeling and Analysis of Velocity Overshoot in Extremely Scaled CMOS Devices and Circuits," IEEE Trans. Electron Devices, vol. 48, pp. 2074-2080, Sept. 2001. S. Veeraraghavan and J. G. Fossum, "A Physical Short-Channel Model for the Thin-Film SOI MOSFET Applicable to Device and Circuit CAD," IEEE Trans. Electron Devices, vol. 35, pp. 1866-1875, Nov. 1988. J. G. Fossum and S. Krishnan, "Physical Modeling Needed for Reliable SOI Circuit Design," IEICE Trans. on Electronics, vol. E80-C, pp. 388-393, March 1997. M. M. Pelella and J. G. Fossum, "On the Performance Advantage of PD/SOI CMOS with Floating Bodies," IEEE Trans. Electron Devices, vol. 49, pp. 96-104, Jan. 2002. The last paper listed demonstrates the utility of the unified UFPDB model. A good overview of UFPDB is given in the paper included in this directory. Note that the model parameters must be evaluated via the process-based calibration methodology described in the report included in this directory. If global optimization is used, the physical nature of the models may be undermined. ------------------------------------------------- Jerry G. Fossum Professor SOI Group Department of Electrical and Computer Engineering University of Florida 541 New Engineering Building P.O. Box 116130 Gainesville, FL 32611-6130 352-392-4921 (tel) 352-392-8381 (fax) fossum@tec.ufl.edu http://www.soi.tec.ufl.edu -------------------------------------------------