`ACM`

In HSPICE this selects the area calculation method.uses only one model for the bulk-to-source and bulk-to-drain diodes. It corresponds to the HSPICE equivalent of*WRspice*`ACM`=0. Do not use this parameter for.*WRspice*`ACM`is not needed if`AS`,`AD`,`PS`, and`PD`are specified explicitly.`CJGATE`

In HSPICE this is the zero-bias gate-edge sidewall bulk junction capacitance used with`ACM`=3 only. There is noequivalent.*WRspice*`HDIF`,`LDIF`

In HSPICE this is the ``length of heavily doped diffusion'' and ``length of lightly doped diffusion''. They are used with the HSPICE`ACM`=2 MOS diode models, and there are noequivalents.*WRspice*`HDIF`and`LDIF`are not needed if`AS`,`AD`,`PS`, and`PD`are specified explicitly.`N`

In HSPICE this is the ``emission coefficient'', and is taken as an alias for the BSIM3`NJ`parameter.`RDC`

In HSPICE this is additional drain resistance due to contact resistance. If`RD`is specified, use*RD*_{new}=*RD*_{old}+*RDC*`RSH`is specified, then`RDC`should be added to`RD`=`NRD`*`RSH`. Since`NRD`is a device parameter and not a model parameter, a typical`NRD`value must be used.`RSC`

In HSPICE this is additional source resistance due to contact resistance. If`RS`is specified, use*RS*_{new}=*RS*_{old}+*RSC*`RSH`is specified, then`RSC`should be added to`RS`=`NRS`*`RSH`. Since`NRS`is a device parameter and not a model parameter, a typical`NRS`value must be used.`WMLT`,`LMLT`

In HSPICE these are ``length of heavily doped diffusion'' and ``length of lightly doped diffusion'' used in the`ACM`=1-3 models. There are noequivalents.*WRspice*`WMLT`and`LMLT`are not needed if`AS`,`AD``PS`, and`PD`are specified explicitly.