MOS Diode Model Parameters

ACM
In HSPICE this selects the area calculation method. WRspice uses only one model for the bulk-to-source and bulk-to-drain diodes. It corresponds to the HSPICE equivalent of ACM=0. Do not use this parameter for WRspice. ACM is not needed if AS, AD, PS, and PD are specified explicitly.

CJGATE
In HSPICE this is the zero-bias gate-edge sidewall bulk junction capacitance used with ACM=3 only. There is no WRspice equivalent.

HDIF, LDIF
In HSPICE this is the ``length of heavily doped diffusion'' and ``length of lightly doped diffusion''. They are used with the HSPICE ACM=2 MOS diode models, and there are no WRspice equivalents. HDIF and LDIF are not needed if AS, AD, PS, and PD are specified explicitly.

N
In HSPICE this is the ``emission coefficient'', and is taken as an alias for the BSIM3 NJ parameter.

RDC
In HSPICE this is additional drain resistance due to contact resistance. If RD is specified, use

RD_new = RD_old + RDC

If RSH is specified, then RDC should be added to RD=NRD*RSH. Since NRD is a device parameter and not a model parameter, a typical NRD value must be used.

RSC
In HSPICE this is additional source resistance due to contact resistance. If RS is specified, use

RS_new = RS_old + RSC

If RSH is specified, then RSC should be added to RS=NRS*RSH. Since NRS is a device parameter and not a model parameter, a typical NRS value must be used.

WMLT, LMLT
In HSPICE these are ``length of heavily doped diffusion'' and ``length of lightly doped diffusion'' used in the ACM=1-3 models. There are no WRspice equivalents. WMLT and LMLT are not needed if AS, AD PS, and PD are specified explicitly.